Staff Physical Design Engineer, HBM

Micron Technology
Texas, United States
Workplace: OnsiteFull timeFunction: Design (Product/UX/UI/Visual)Experience: 7+ yearsSkills: ["Problem-solving","Independent work","Technical leadership","Mentoring","Collaboration"]

Drive end-to-end physical design for HBM base die and memory dies, from netlist to GDSII. Own floorplanning, power planning, placement, CTS, routing, and signoff for high-density HBM layouts, including physical architecture and reliability closures (IR drop, EM, thermal). Partner across PHY, memory, RTL, DFT, SI, packaging, and test to influence architecture/interface definitions and lead ECO/tape-out readiness for advanced-node success.

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FursaFursa
Micron Technology
Micron Technology
2 days ago

Staff Physical Design Engineer, HBM

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Job Summary

Drive end-to-end physical design for HBM base die and memory dies, from netlist to GDSII. Own floorplanning, power planning, placement, CTS, routing, and signoff for high-density HBM layouts, including physical architecture and reliability closures (IR drop, EM, thermal). Partner across PHY, memory, RTL, DFT, SI, packaging, and test to influence architecture/interface definitions and lead ECO/tape-out readiness for advanced-node success.
Location: Texas, United States
Workplace: Onsite
Employment Type: Full time
Job Function: Design (Product/UX/UI/Visual)
Seniority: Mid level

Key Responsibilities

  • •Drive end-to-end HBM physical design from netlist through GDSII.
  • •Own floorplanning, power planning, placement, CTS, routing, and physical signoff readiness (STA, IR/EM, SI, DRC, LVS, density, reliability).
  • •Define and drive HBM-specific physical architecture (channel partitioning, PHY placement, TSV keep-out regions) and perform timing closure across corners.
  • •Drive IR drop, EM, and thermal closure across operating modes and ensure compliance with foundry reliability rules.
  • •Lead ECO strategies and tape-out readiness, partnering with memory, PHY, RTL/synthesis/DFT, SI, packaging, and test teams.

Pay and Benefits

Perks:Health InsuranceDentalVisionPaid LeavePaid HolidaysLearning BudgetWellness StipendEquity

Key Requirements

  • •Bachelor’s or Master’s degree in Electrical Engineering, Computer Engineering, or a related field.
  • •7+ years of hands-on experience in advanced-node physical design.
  • •Proven tape-out experience on HBM, DRAM, or very large memory-centric designs.
  • •Expert knowledge of floorplanning/hierarchical physical design, timing closure/STA, and power integrity (IR/EM) with thermal awareness.
  • •Expert-level experience with Cadence Innovus and/or Synopsys ICC2/Fusion Compiler, including strong PrimeTime STA proficiency.
Experience:7+ yearsSemiconductorHBMDRAMAdvanced-nodePhysical design2.5D interposer
Education:
Skills:Problem-solvingIndependent workTechnical leadershipMentoringCollaboration
Tech Stack:HBMGDSIICadence InnovusSynopsys ICC2Fusion CompilerPrimeTimeRedHawkCalibreDRCLVSSTAIR/EMSIDFTTclPythonFinFETSub-10nm2.5D interposerTSV

Company Brief

Micron Technology
Designs and manufactures semiconductor memory and storage solutions, including DRAM, NAND, and NOR flash, for computing, networking, mobile, and automotive markets worldwide.
Industry: Electronics Manufacturing
Company Size: Enterprise (1,001+ employees)
Revenue: USD 1B+
Growth: Public Company
Valuation: Public Company (Market Cap in USD)
Funding: IPO / Publicly Listed
Headquarters: Boise, United States
Founded: 1978
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Glassdoor: 3.7
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