Wide Bandgap Device/PI Engineer (R&D)

Texas Instruments
Dallas
Workplace: OnsiteFull timeFunction: Research & Scientific (R&D)Experience: 3+ yearsEducation: mastersSkills: ["Problem solving","Communication","Collaboration","Data analysis","Decision-making"]

Lead development of gallium nitride (GaN) power devices by driving simulations, device design, and layout, then optimizing process flows for high-volume manufacturing. Partner with fab/manufacturing, reliability, business units, and Kilby Labs to execute design of experiments (DOE), solve integration challenges, and improve manufacturability and yield through failure root-cause investigations. Apply deep knowledge of III-nitride device physics and hands-on characterization to deliver higher efficiency, faster switching, and reliable power electronics.

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FursaFursa
Texas Instruments
Texas Instruments
1 day ago

Wide Bandgap Device/PI Engineer (R&D)

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Job Summary

Lead development of gallium nitride (GaN) power devices by driving simulations, device design, and layout, then optimizing process flows for high-volume manufacturing. Partner with fab/manufacturing, reliability, business units, and Kilby Labs to execute design of experiments (DOE), solve integration challenges, and improve manufacturability and yield through failure root-cause investigations. Apply deep knowledge of III-nitride device physics and hands-on characterization to deliver higher efficiency, faster switching, and reliable power electronics.
Location: Dallas
Workplace: Onsite
Employment Type: Full time
Job Function: Research & Scientific (R&D)

Key Responsibilities

  • •Lead development, characterization, and optimization of GaN power devices focused on performance and reliability.
  • •Perform GaN device simulations (TCAD) and develop device design and layout.
  • •Develop robust process flows, drive DOE execution, and resolve complex integration challenges.
  • •Collaborate with fab/manufacturing to ensure device manufacturability.
  • •Conduct failure root-cause investigations to improve device/process/reliability/yield.

Key Requirements

  • •Master’s degree in Electrical Engineering, Electrical & Computer Engineering, Materials Engineering, Physics, or a related field.
  • •3+ years of hands-on experience developing GaN or other compound semiconductor devices/processes.
  • •Strong semiconductor processing knowledge, especially in III-V materials.
  • •Experience with process integration, DOE planning, electrical characterization, and failure analysis.
  • •Proven ability to work across functional teams and deliver results in a fast-paced R&D environment.
Experience:3+ yearsSemiconductorsGaNCompound semiconductors
Education:Master's in Electrical Engineering, Electrical & Computer Engineering, Materials Engineering, or Physics
Skills:Problem solvingCommunicationCollaborationData analysisDecision-making
Tech Stack:GaNGallium NitrideIII-nitrideTCADHEMTGaN-on-SiliconProcess integrationDesign of experiments (DOE)Electrical characterizationFailure analysisDevice physicsReliability

Company Brief

Texas Instruments
Designs and manufactures semiconductors and analog chips used in industrial, automotive, personal electronics, communications, and enterprise systems. It is one of the world’s largest semiconductor companies, with a broad portfolio of embedded processing and power products.
Industry: Electronics Manufacturing
Company Size: Enterprise (1,001+ employees)
Revenue: USD 1B+
Growth: Public Company
Valuation: Public Company (Market Cap in USD)
Funding: IPO / Publicly Listed
Headquarters: Dallas, United States
Founded: 1930
WebsiteLinkedIn