Principal Design Engineer

Micron Technology
San Jose
Workplace: OnsiteFull timeUSD 176,000 - 298,000 annuallyFunction: Design (Product/UX/UI/Visual)Experience: 8+ yearsEducation: bachelorsSkills: ["Technical communication","Cross-functional collaboration","Project planning","Design trade-off evaluation","Documentation"]

Lead datapath circuit and TSV interface design for Micron’s NAND flash memory products within the NVEG organization. Drive architecture trade-offs and task forces for major changes, set signal/power integrity and timing budgets, and design/verify TSV-specific DFT and wide parallel bus circuitry. Oversee full-chip simulation and Verilog regression, then support post-silicon validation, debug, and tape-out revisions while collaborating across process, packaging, and integration teams.

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Micron Technology
Micron Technology
2 weeks ago

Principal Design Engineer

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Job Summary

Lead datapath circuit and TSV interface design for Micron’s NAND flash memory products within the NVEG organization. Drive architecture trade-offs and task forces for major changes, set signal/power integrity and timing budgets, and design/verify TSV-specific DFT and wide parallel bus circuitry. Oversee full-chip simulation and Verilog regression, then support post-silicon validation, debug, and tape-out revisions while collaborating across process, packaging, and integration teams.
Location: San Jose
Workplace: Onsite
Employment Type: Full time
Job Function: Design (Product/UX/UI/Visual)
Seniority: Mid level

Key Responsibilities

  • •Design and optimize TSV interface circuits connecting memory die to logic die, including internal TSV channel Rx/Tx, impedance matching, and timing margin analysis.
  • •Develop TSV electrical models, define circuit design constraints, and establish signal integrity and power integrity requirements for highly parallel IO and array operations.
  • •Design and verify TSV-specific DFT circuits (loopback modes, TSV continuity checks, and lane redundancy/remapping) and build functional verification plans using full-chip simulation and Verilog regression.
  • •Architect the internal datapath from page buffer through sensing, redundancy logic, and bus drivers to the TSV output interface, ensuring timing closure across wide parallel buses.
  • •Support post-silicon validation and debug, drive schematic edits and tape-out revisions, and coordinate TSV reliability constraints with packaging and assembly teams.

Pay and Benefits

Salary: USD 176,000 - 298,000 annually
Perks:Health InsuranceDentalVisionPaid LeavePaid Holidays

Key Requirements

  • •BS or MS in Electrical Engineering with 8+ years of relevant memory circuit design experience in DRAM, NAND, or other high-density memory technologies.
  • •Experience designing TSV interface circuits or high-speed memory interfaces (NV-LPDDR4, DDR4/5, LPDDR5/6, HBM3/3E/4), including timing analysis and signal integrity.
  • •Strong knowledge of highly parallel bus performance and power/area optimization, including clock distribution/skew management and EpB optimization for 3D-stacked memory architectures.
  • •Experience managing sophisticated circuit design projects across multiple functional blocks and multi-functional teams, communicating design trade-offs, schedule progress, and outcomes.
  • •Proficiency with highly parallel bus performance, power/area optimization, and timing budgets under PVT variations for full datapath validation.
Experience:8+ yearsSemiconductorMemoryNANDDRAMHigh-density memory3D-stacked memoryHBMSignal integrityPower integrity
Education:Bachelor's in Electrical Engineering
Skills:Technical communicationCross-functional collaborationProject planningDesign trade-off evaluationDocumentation
Tech Stack:TSVThrough-Silicon ViaRx/TxImpedance matchingTiming margin analysisElectrical modelsSignal integrityEye marginCrosstalkNoise budgetPower integrityDesign for Testability (DFT)Loopback test modesTSV continuity checksLane redundancyRemapping logicVerilogFunctional verificationFull chip circuit simulationRegression

Company Brief

Micron Technology
Designs and manufactures semiconductor memory and storage solutions, including DRAM, NAND, and NOR flash, for computing, networking, mobile, and automotive markets worldwide.
Industry: Electronics Manufacturing
Company Size: Enterprise (1,001+ employees)
Revenue: USD 1B+
Growth: Public Company
Valuation: Public Company (Market Cap in USD)
Funding: IPO / Publicly Listed
Headquarters: Boise, United States
Founded: 1978
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