Principal Engineer Advanced DRAM PI

Micron Technology
Boise, Idaho, United States
Workplace: OnsiteFull timeFunction: Communications, PR & CommunityExperience: 7-10 yearsEducation: mastersSkills: ["Cross-functional collaboration","Experimental design","Data analysis","Reliability thinking","Yield improvement"]

Drive the development of first-in-industry Advanced DRAM solutions by leading process integration for charge storage devices and thin-film transistors. Integrate new memory device architectures from concept through silicon implementation, design experiments to evaluate performance and reliability, and analyze inline/defect/parametric/probe data. Collaborate across process integration, device engineering, materials science, characterization, and reliability teams to optimize process flows, improve yield, and meet product requirements.

Loading

Loading job details...

Preparing the role view and application actions.

FursaFursa
Micron Technology
Micron Technology
5 days ago

Principal Engineer Advanced DRAM PI

✓ Verified Job

Canonical indexed version, validated from employer's careers page.

Source: Company careers pageValidated by: Fursa AI
Last checked: 5 hours agoStatus: Live

Job Summary

Drive the development of first-in-industry Advanced DRAM solutions by leading process integration for charge storage devices and thin-film transistors. Integrate new memory device architectures from concept through silicon implementation, design experiments to evaluate performance and reliability, and analyze inline/defect/parametric/probe data. Collaborate across process integration, device engineering, materials science, characterization, and reliability teams to optimize process flows, improve yield, and meet product requirements.
Location: Boise, Idaho, United States
Workplace: Onsite
Employment Type: Full time
Job Function: Communications, PR & Community
Seniority: Mid level

Key Responsibilities

  • •Lead process integration efforts for Advanced DRAM technologies, including charge storage devices and thin-film transistors (TFTs).
  • •Develop and integrate new memory device architectures from concept through silicon implementation and productization.
  • •Design and implement experiments to evaluate device performance, variability, reliability, and failure mechanisms.
  • •Collaborate with cross-functional teams to optimize process flows and deliver solutions meeting product requirements.
  • •Drive yield improvement initiatives through analysis of inline, defect, parametric, and probe data.

Pay and Benefits

Perks:Health InsuranceDentalVisionPaid LeavePaid Holidays

Key Requirements

  • •MS or PhD in Physics, Materials Science & Engineering, Electrical Engineering, or a related technical field.
  • •7 to 10 years of semiconductor experience in memory technology, process integration, or device development.
  • •Strong knowledge of memory technologies such as DRAM, NAND, and emerging memory architectures.
  • •Deep understanding of semiconductor process integration, process development, device physics, and materials science.
  • •Experience leading cross-functional technical projects and applying experimental design and data analysis methodologies.
Experience:7-10 yearsSemiconductorsMemory technologyDRAMNANDProcess integration
Education:Master's in Physics, Materials Science & Engineering, Electrical Engineering
Skills:Cross-functional collaborationExperimental designData analysisReliability thinkingYield improvement
Tech Stack:AI-assisted analytics

Company Brief

Micron Technology
Designs and manufactures semiconductor memory and storage solutions, including DRAM, NAND, and NOR flash, for computing, networking, mobile, and automotive markets worldwide.
Industry: Electronics Manufacturing
Company Size: Enterprise (1,001+ employees)
Revenue: USD 1B+
Growth: Public Company
Valuation: Public Company (Market Cap in USD)
Funding: IPO / Publicly Listed
Headquarters: Boise, United States
Founded: 1978
Glassdoor
Glassdoor: 3.7
WebsiteLinkedIn