Intern - Advanced DRAM Process Integration
Boise
Workplace: OnsiteInternshipFunction: Communications, PR & CommunityEducation: phdSkills: ["Communication","Problem-solving","Technical leadership"]Support development of next-generation 3D DRAM technologies in a 300mm R&D fabrication environment. Work on advanced memory structures such as charge storage devices and thin-film transistors, designing and analyzing experiments to improve device performance, reliability, and manufacturability. Collaborate with multi-functional teams across process development, characterization, design, probe, yield enhancement, and reliability while using approved AI and data analysis to diagnose variability and optimize integration.
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