Wet Process Development Engineer

Texas Instruments
United States
Workplace: OnsiteFull timeFunction: Communications, PR & CommunityEducation: mastersSkills: ["Communication","Stakeholder management","Cross-functional collaboration","Root cause analysis","Process characterization"]

Develop and qualify wet etch and clean modules for 28nm SiGe and silicidation device flows, enabling ramp from chemistry formulation through module integration, yield analysis, and production readiness. Optimize selective etching and module integration to protect underlying silicon and gate oxide, drive defect root-cause and yield improvements using FMEA/8D and SPC, and collaborate with Epi, Lithography, Spacer Films, and CMP teams. Characterize etch profiles with SEM, TEM, ellipsometry, and AFM.

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FursaFursa
Texas Instruments
Texas Instruments
2 months ago

Wet Process Development Engineer

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Job Summary

Develop and qualify wet etch and clean modules for 28nm SiGe and silicidation device flows, enabling ramp from chemistry formulation through module integration, yield analysis, and production readiness. Optimize selective etching and module integration to protect underlying silicon and gate oxide, drive defect root-cause and yield improvements using FMEA/8D and SPC, and collaborate with Epi, Lithography, Spacer Films, and CMP teams. Characterize etch profiles with SEM, TEM, ellipsometry, and AFM.
Location: United States
Workplace: Onsite
Employment Type: Full time
Job Function: Communications, PR & Community
Seniority: Mid level

Key Responsibilities

  • •Develop and optimize wet process flows for SiGe epi-layer cleaning and selective removal without damaging underlying Si or gate oxide.
  • •Define precise wet etch chemistries for isotropic and anisotropic etching, including SiGe/Si/silicided film selectivity and undercut control at 28nm.
  • •Identify root causes of process-related defects using FMEA and 8D, and implement SPC to support 28nm yield ramp to high-volume manufacturing.
  • •Partner with Epi, Lithography, Spacer Films, and CMP teams to integrate wet modules into the full 28nm SiGe and silicidation fabrication flow.
  • •Use SEM, TEM, ellipsometry, and AFM to characterize surface roughness and etch profiles at atomic resolution.

Key Requirements

  • •Master’s or Ph.D. in Materials Science, Chemical Engineering, Electrical Engineering, Physics, or a related field.
  • •5+ years in R&D semiconductor wafer fabrication for advanced nodes (28nm or below).
  • •Technical depth in SiGe device physics, surface preparation, and chemical reaction kinetics.
  • •Hands-on experience with single-wafer or batch wet process tools (LAM, TEL, SCREEN, or equivalent).
  • •Design of Experiments (DOE) methodology and experience leading cross-functional teams from concept to production-ready status.
Experience:Semiconductor wafer fabricationR&D28nmAdvanced nodes
Education:Master's
Skills:CommunicationStakeholder managementCross-functional collaborationRoot cause analysisProcess characterization
Tech Stack:SiGeSilicided contactWet etchWet cleanIsotropic etchingAnisotropic etchingFMEA8DStatistical Process Control (SPC)Design of Experiments (DOE)SEMTEMEllipsometryAFMLAMTELSCREENEpiLithographySpacer Films

Company Brief

Texas Instruments
Designs and manufactures semiconductors and analog chips used in industrial, automotive, personal electronics, communications, and enterprise systems. It is one of the world’s largest semiconductor companies, with a broad portfolio of embedded processing and power products.
Industry: Electronics Manufacturing
Company Size: Enterprise (1,001+ employees)
Revenue: USD 1B+
Growth: Public Company
Valuation: Public Company (Market Cap in USD)
Funding: IPO / Publicly Listed
Headquarters: Dallas, United States
Founded: 1930
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