MOCVD GaN Process Development Engineer

Develop robust, low-cost, manufacturable GaN unit processes and integration to support volume production of power electronics. Perform hands-on MOCVD GaN epitaxy process development from conception through qualification, including recipe development, characterization, metrology, process control setup, and factory automation coordination. Drive improvements by correlating device and process/metrology data, using design of experiments and SPC methods, and collaborating across multiple engineering groups and suppliers.