Staff Memory Design Engineer, HBM

Micron Technology
Texas, United States
Workplace: OnsiteFull timeFunction: Design (Product/UX/UI/Visual)Experience: 6+ yearsEducation: bachelorsSkills: ["Strong analytical skills","Problem-solving","Self-motivated","Collaboration","Communication"]

Design and optimize digital and analog DRAM circuit solutions for next-generation memory products, from circuit concepts through floorplans, routing, power delivery, and die sizing. Conduct simulations and analyze power, performance, reliability, and parasitics using tools like FINESIM, HSPICE, and Verilog. Validate against silicon through experiments and tape-out revisions, collaborating globally across design, verification, product engineering, test, and manufacturing to improve manufacturability, cost, and time-to-market.

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FursaFursa
Micron Technology
Micron Technology
3 months ago

Staff Memory Design Engineer, HBM

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Last checked: 17 hours agoStatus: Live

Job Summary

Design and optimize digital and analog DRAM circuit solutions for next-generation memory products, from circuit concepts through floorplans, routing, power delivery, and die sizing. Conduct simulations and analyze power, performance, reliability, and parasitics using tools like FINESIM, HSPICE, and Verilog. Validate against silicon through experiments and tape-out revisions, collaborating globally across design, verification, product engineering, test, and manufacturing to improve manufacturability, cost, and time-to-market.
Location: Texas, United States
Workplace: Onsite
Employment Type: Full time
Job Function: Design (Product/UX/UI/Visual)
Seniority: Mid level

Key Responsibilities

  • •Design digital, analog, and DRAM core circuits using CMOS logic and transistors from concept to solution.
  • •Create optimized circuit floorplans and layout considerations (placement, routing, power delivery, sense margins, array timing, die size) with layout leadership.
  • •Run circuit simulations and analyze power, performance, reliability, and parasitic impacts using FINESIM, HSPICE, and Verilog.
  • •Validate via reticle experiments and simulation-to-silicon correlation, identifying and implementing required schematic edits.
  • •Collaborate globally across build, verification, product engineering, test, probe, process integration, assembly, and marketing; manage tasks and lead design reviews/status reporting.

Pay and Benefits

Perks:MedicalDentalVisionPaid LeavePaid Holidays

Key Requirements

  • •Coursework in CMOS Circuit Design, VLSI, and Analog Circuit Design, including device reliability and circuit floor planning.
  • •Proficiency with Cadence Virtuoso and experience simulating with FINESIM, HSPICE, and Verilog.
  • •Experience designing, simulating, and optimizing DRAM circuits, including DRAM subsystem architecture, specification, operation, or design.
  • •Ability to proactively collaborate across engineering organizations to optimize manufacturing quality, cost, reliability, and time-to-market.
  • •BS or MS in Electrical Engineering (or related) plus 6 years of experience in DRAM design, product, or system.
Experience:6+ yearsDRAMSemiconductors
Education:Bachelor's in Electrical Engineering
Skills:Strong analytical skillsProblem-solvingSelf-motivatedCollaborationCommunication
Tech Stack:Cadence VirtuosoFINESIMHSPICEVerilogCMOSTransistorsDRAMFloorplanning

Company Brief

Micron Technology
Designs and manufactures semiconductor memory and storage solutions, including DRAM, NAND, and NOR flash, for computing, networking, mobile, and automotive markets worldwide.
Industry: Electronics Manufacturing
Company Size: Enterprise (1,001+ employees)
Revenue: USD 1B+
Growth: Public Company
Valuation: Public Company (Market Cap in USD)
Funding: IPO / Publicly Listed
Headquarters: Boise, United States
Founded: 1978
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Glassdoor: 3.7
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