SiGe HBT Device Expert

Texas Instruments
Dallas
Workplace: OnsiteFull timeFunction: Hardware, Embedded & Systems EngineeringExperience: 10+ yearsEducation: mastersSkills: ["Cross-functional collaboration","Technical leadership","Communication","Stakeholder management","Initiative and drive"]

Develop and optimize BiCMOS SiGeC devices for volume production, driving device characterization and reliability-focused performance targets. Create next-generation processes and components, run TCAD/process and device simulation (including HF simulation), and analyze results using design of experiments and RF/DC characterization. Partner with process, integration, reliability, packaging, circuit design, and test teams, collaborating across development groups and product stakeholders to improve SiGe HBT component performance.

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FursaFursa
Texas Instruments
Texas Instruments
1 day ago

SiGe HBT Device Expert

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Source: Company careers pageValidated by: Fursa AI
Last checked: 7 hours agoStatus: Live

Job Summary

Develop and optimize BiCMOS SiGeC devices for volume production, driving device characterization and reliability-focused performance targets. Create next-generation processes and components, run TCAD/process and device simulation (including HF simulation), and analyze results using design of experiments and RF/DC characterization. Partner with process, integration, reliability, packaging, circuit design, and test teams, collaborating across development groups and product stakeholders to improve SiGe HBT component performance.
Location: Dallas
Workplace: Onsite
Employment Type: Full time
Job Function: Hardware, Embedded & Systems Engineering
Seniority: Mid level

Key Responsibilities

  • •Develop new processes and components enabling next-generation BiCMOS SiGeC technologies.
  • •Drive TCAD simulation and HF simulations, plus design of experiments, RF/DC characterization, and data analysis.
  • •Collaborate with process, integration, reliability, packaging, circuit design, and test engineers to achieve goals.
  • •Work with product groups to identify and optimize BICMOS component performance for critical final device parameters.
  • •Lead technical discussions, manage multiple parallel tasks, and communicate project status across organizational boundaries.

Key Requirements

  • •Master’s degree in Electrical Engineering or Physics.
  • •10+ years of professional experience as a Device/PI engineer working with SiGe HBT devices.
  • •Strong device physics and semiconductor device engineering background.
  • •Industry experience developing SiGe:C HBT transistors for RF/mm-wave applications.
  • •Comfort driving characterization and optimization to ensure robustness, reliability, and manufacturability meeting electrical performance targets.
Experience:10+ yearsSemiconductorsRF/mm-waveBiCMOSDevice engineering
Education:Master's
Skills:Cross-functional collaborationTechnical leadershipCommunicationStakeholder managementInitiative and drive
Tech Stack:SiGe HBTSiGe:CBiCMOSTCADHF simulationProcess simulationDevice simulation3D field solversDesign of experimentsRF characterizationDC characterizationCadenceMATLABJMPStatistical software

Company Brief

Texas Instruments
Designs and manufactures semiconductors and analog chips used in industrial, automotive, personal electronics, communications, and enterprise systems. It is one of the world’s largest semiconductor companies, with a broad portfolio of embedded processing and power products.
Industry: Electronics Manufacturing
Company Size: Enterprise (1,001+ employees)
Revenue: USD 1B+
Growth: Public Company
Valuation: Public Company (Market Cap in USD)
Funding: IPO / Publicly Listed
Headquarters: Dallas, United States
Founded: 1930
WebsiteLinkedIn