Engineer- DRAM, Advanced DRAM and EM Device/Cell Technology

Micron Technology
Boise, Idaho
Workplace: OnsiteFull timeFunction: Hardware, Embedded & Systems EngineeringExperience: 5+ yearsSkills: ["Collaboration","Problem-solving","Communication","Technical status communication","Written and verbal communication"]

Define and validate next-generation DRAM device and cell technologies by translating product requirements into device-level electrical targets. Characterize memory arrays, analyze electrical behavior and failures, and optimize cell and access device performance through experiments. Build physical and electrical models (TCAD and compact modeling), establish stress/reliability methodologies, and root-cause array-level variability to improve yield, quality, and performance. Collaborate across process integration and engineering teams.

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Micron Technology
Micron Technology
1 month ago

Engineer- DRAM, Advanced DRAM and EM Device/Cell Technology

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Source: Company careers pageValidated by: Fursa AI
Last checked: 7 hours agoStatus: Live

Job Summary

Define and validate next-generation DRAM device and cell technologies by translating product requirements into device-level electrical targets. Characterize memory arrays, analyze electrical behavior and failures, and optimize cell and access device performance through experiments. Build physical and electrical models (TCAD and compact modeling), establish stress/reliability methodologies, and root-cause array-level variability to improve yield, quality, and performance. Collaborate across process integration and engineering teams.
Location: Boise, Idaho
Workplace: Onsite
Employment Type: Full time
Job Function: Hardware, Embedded & Systems Engineering

Key Responsibilities

  • •Define and drive electrical specifications for DRAM, Advanced DRAM, and emerging memory technologies, translating product requirements into device-level targets
  • •Design, implement, and interpret experiments to optimize cell and access device performance, including materials experiments and characterization methodologies
  • •Develop physical and electrical models (TCAD and compact modeling) to identify performance, yield, and reliability limiters
  • •Create and improve stress methodologies (e.g., TDDB, leakage, variability, endurance) and establish design margins to evaluate reliability
  • •Analyze array-level behavior to root-cause variability and optimize distributions, partnering cross-functionally to translate device insights into technology improvements

Pay and Benefits

Perks:Health InsuranceDentalVisionPaid Time-offPaid HolidaysParental Leave

Key Requirements

  • •MS with 5+ years of industry experience or PhD with hands-on research in Electrical Engineering, Physics, or related field
  • •Strong expertise in semiconductor device physics including CMOS, diodes, and related devices
  • •Deep knowledge of mainstream memory technologies such as DRAM, NAND, NOR, or SRAM
  • •Experience with DRAM array characterization and failure analysis
  • •Proficiency in data analysis, DOE, Agentic AI, and statistical techniques using tools such as JMP or Python
Experience:5+ yearsSemiconductorsDRAMMemory technologiesDevice physicsR&D
Education:
Skills:CollaborationProblem-solvingCommunicationTechnical status communicationWritten and verbal communication
Tech Stack:TCADCompact modelingJMPPythonDOEStatistical techniques

Company Brief

Micron Technology
Designs and manufactures semiconductor memory and storage solutions, including DRAM, NAND, and NOR flash, for computing, networking, mobile, and automotive markets worldwide.
Industry: Electronics Manufacturing
Company Size: Enterprise (1,001+ employees)
Revenue: USD 1B+
Growth: Public Company
Valuation: Public Company (Market Cap in USD)
Funding: IPO / Publicly Listed
Headquarters: Boise, United States
Founded: 1978
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